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IPP100N06S3-04

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IPP100N06S3-04

Product Category : MOSFET

Vgs (Max) : ±20V

Current - Continuous Drain (Id) @ 25°C : 100A (Tc)

FET Type : N-Channel

Mounting Type : Through Hole

Gate Charge (Qg) (Max) @ Vgs : 314nC @ 10V

Manufacturer : Infineon Technologies

Minimum Quantity : 500

Drive Voltage (Max Rds On, Min Rds On) : 10V

Operating Temperature : -55°C ~ 175°C (TJ)

FET Feature : -

Series : OptiMOS™

Input Capacitance (Ciss) (Max) @ Vds : 14230pF @ 25V

Supplier Device Package : PG-TO220-3-1

Part Status : Obsolete

Packaging : Tube

Rds On (Max) @ Id, Vgs : 4.4 mOhm @ 80A, 10V

Power Dissipation (Max) : 214W (Tc)

Package / Case : TO-220-3

Technology : MOSFET (Metal Oxide)

Vgs(th) (Max) @ Id : 4V @ 150µA

Drain to Source Voltage (Vdss) : 55V

Description : MOSFET N-CH 55V 100A TO-220

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The IPP100N06S3-04,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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